PMBTA13 View Datasheet(PDF) - Philips Electronics
Part Name
Description
View to exact match
PMBTA13 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN Darlington transistors
Product specification
PMBTA13; PMBTA14
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 30 V)
• High DC current gain (min. 10000).
APPLICATIONS
• High input impedance preamplifiers.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN Darlington transistor in a SOT23 plastic package.
PNP complement: PMBTA64.
MARKING
TYPE NUMBER
PMBTA13
PMBTA14
MARKING CODE(1)
∗1M
∗1N
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
handbook, halfpage
3
1
2
Top view
1
3
TR1
TR2
2
MAM298
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCES
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
VBE = 0
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
30
30
10
500
800
200
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 29
2
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