UPD45128163-I-E View Datasheet(PDF) - Elpida Memory, Inc

Part Name

Description

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UPD45128163-I-E

128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)

Elpida Memory, Inc 

µPD45128163-I-E

Write command

Fig.4 Column address and write command

(/CS, /CAS, /WE = Low, /RAS = High)

If the mode register is in the burst write mode, this command sets the

burst start address given by the column address to begin the burst

write operation. The first write data in burst mode can input with this

command with subsequent data on following clocks.

CLK

CKE

/CS

/RAS

/CAS

/WE

BA0(A13), BA1(A12)

A10

Add

H

Col.

Read command

Fig.5 Column address and read command

(/CS, /CAS = Low, /RAS, /WE = High)

Read data is available after /CAS latency requirements have been

met. This command sets the burst start address given by the column

address.

CLK

CKE

/CS

/RAS

/CAS

/WE

BA0(A13), BA1(A12)

A10

Add

H

Col.

CBR (auto) refresh command

Fig.6 CBR (auto) refresh command

(/CS, /RAS, /CAS = Low, /WE, CKE = High)

This command is a request to begin the CBR (auto) refresh operation.

The refresh address is generated internally.

Before executing CBR (auto) refresh, all banks must be precharged.

After this cycle, all banks will be in the idle (precharged) state and

ready for a row activate command.

During tRC period (from refresh command to refresh or activate

command), the µPD45128xxx cannot accept any other command.

CLK

CKE H

/CS

/RAS

/CAS

/WE

BA0(A13), BA1(A12)

A10

Add

10

Data Sheet E0729N10 (Ver. 1.0)

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