DG306AE25 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
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DG306AE25 Datasheet PDF : 19 Pages
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DG306AE25
CURVES
2.0
2.0
1.5
1.5
1.0
1.0
0.5
VGT 0.5
IGT
0
0
-50 -25 0 25 50 75 100 125
Junction temperature Tj - (°C)
Fig.1 Gate trigger voltage/curremt vs junction temperature
2000
1500
Measured under pulse
conditions
IG(ON) = 2A
Half sine wave 10ms
1000
Tj = 25°C
Tj = 125°C
500
0
0
1.0
2.0
3.0
4.0
5.0
6.0
Instantaneous on-state voltage - (V)
Fig.2 Maximum limit on-state characteristics
4/19
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