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Description
DG306AE25 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
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DG306AE25
Gate Turn-off Thyristor
Dynex Semiconductor
DG306AE25 Datasheet PDF : 19 Pages
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DG306AE25
10/19
550
Conditions:
500
T
j
= 25°C
Cs = 1.0µF
dI
GQ
/dt = 15A/µs
450
400
350
300
V
DM
= 2000V
V
DM
= 1500V
V
DM
= 1000V
250
200
150
100
50
0
100
200
300
400
500
600
On-state current - (A)
Fig.15 Turn-off energy loss vs on-state current
575
V
DM
= 2000V
550
525
500
475
V
DM
= 1500V
450
Conditions:
I
T
= 600A
425
T
j
= 25°C
Cs = 1.0µF
400
V
DM
= 1000V
375
350
10 15 20 25 30 35 40 45 50
Rate of rise of reverse gate current dI
GQ
/dt- (A/µs)
Fig.16 Turn-off energy vs rate of rise of reverse gate current
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