DG306AE25 View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

View to exact match

DG306AE25

Gate Turn-off Thyristor

Dynex Semiconductor 

DG306AE25

0.9VD

VD

0.9IT

dVD/dt

IT

VD VDM

td tr

0.1VD

dIFG/dt

0.1IFG

tgt

IFG

VFG

tw1

VDP

tgs

ITAIL

tgf

tgq

IG(ON)

0.1IGQ

QGQ

0.5IGQM

IGQM

V(RG)BR

VRG

Recommended gate conditions:

ITCM = 600A

IFG = 20A

IG(ON) = 2A d.c.

tw1(min) = 10µs

IGQM = 190A

diGQ/dt = 15A/µs

QGQ = 1300µC

VRG(min) = 2.0V

VRG(max) = 16V

These are recommended Dynex Semiconductor conditions. Other conditions are permitted

according to users gate drive specifications.

Fig.29 General switching waveforms

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