DG306AE25 View Datasheet(PDF) - Dynex Semiconductor
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DG306AE25 Datasheet PDF : 19 Pages
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DG306AE25
17.5
Tj = 125°C
15.0
Conditions:
IT = 600A
Cs = 1.0µF
12.5
10.0
Tj = 25°C
7.5
5.0
10 15 20 25 30 35 40 45 50
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.21 Gate storage time vs rate of rise of reverse gate current
2.0
Conditions:
Cs = 1.0µF
dIGQ/dt = 15A/µs
1.5
Tj = 125°C
1.0
Tj = 25°C
0.5
0.0
0
100
200
300
400
500
600
On-state current - (A)
Fig.22 Gate fall time vs on-state current
13/19
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