IKB03N120H2 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
View to exact match
IKB03N120H2
Infineon Technologies
IKB03N120H2 Datasheet PDF : 15 Pages
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IKP03N120H2,
IKW03N120H2
IKB03N120H2
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
Diode peak rate of fall of reverse
recovery current during tb
trr
Qrr
Irrm
diF/dt
dirr/dt
Tj=25°C,
VCC=800V,IC=3A,
VGE=15V/0V,
RG=82Ω,
Lσ2)=180nH,
Cσ2)=40pF
Energy losses include
“tail” and diode 3)
reverse recovery.
Tj=25°C,
VR=800V, IF=3A,
RG=82Ω
min.
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
9.2
5.2
281
29
0.14
0.15
0.29
42
0.23
10.3
993
1180
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/µs
-
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
Diode peak rate of fall of reverse
recovery current during tb
trr
Qrr
Irrm
diF/dt
dirr/dt
Tj=150°C
VCC=800V,
IC=3A,
VGE=15V/0V,
RG=82Ω,
Lσ2)=180nH,
Cσ2)=40pF
Energy losses include
“tail” and diode 3)
reverse recovery.
Tj=150°C
VR=800V, IF=3A,
RG=82Ω
min.
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
9.4
6.7
340
63
0.22
0.26
0.48
125
0.51
12
829
540
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/µs
-
2) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E
3) Commutation diode from device IKP03N120H2
Power Semiconductors
3
Rev. 2, Mar-04
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