IKB03N120H2 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

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IKB03N120H2

HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

IKP03N120H2,

IKW03N120H2

IKB03N120H2

3A

800V

600V

2A

400V

1A

200V

0A

0V

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8

tp, PULSE WIDTH

Figure 21. Typical turn off behavior, soft

switching

(VGE=15/0V, RG=82Ω, Tj = 150°C,

Dynamic test circuit in Figure E)

180ns

160ns

140ns

120ns

100ns

80ns

60ns

40ns

0Ohm

T =150°C

J

T =25°C

J

100Ohm

200Ohm

300Ohm

RG, GATE RESISTANCE

Figure 23. Typical reverse recovery time

as a function of diode current slope

VR=800V, IF=3A,

Dynamic test circuit in Figure E)

D=0.5

100K/W 0.2

0.1

10-1K/W

0.05

R,(K/W)

0.02

1.9222

0.5852

0.01

0.7168

single pulse R 1

τ, (s)

7.04E-04

2.02E-04

4.39E-03

R2

10-2K/W

10µs

C1=τ1/R1 C2=τ2/R2

100µs

1ms

10ms

tP, PULSE WIDTH

Figure 22. Diode transient thermal

impedance as a function of pulse width

(D=tP/T)

0.6uC

0.5uC

T =150°C

J

0.4uC

0.3uC

0.2uC

0Ohm

T =25°C

J

100Ohm

200Ohm

300Ohm

RG, GATE RESISTANCE

Figure 24. Typical reverse recovery

charge as a function of diode current

slope

(VR=800V, IF=3A,

Dynamic test circuit in Figure E)

Power Semiconductors

10

Rev. 2, Mar-04

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