DIM400GDM33-A000 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
View to exact match
DIM400GDM33-A000 Datasheet PDF : 10 Pages
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ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
td(off)
Turn-off delay time
t
Fall time
f
EOFF
Turn-off energy loss
td(on)
Turn-on delay time
tr
Rise time
EON
Turn-on energy loss
Q
Gate charge
g
Qrr
Diode reverse recovery charge
Irr
Diode reverse recovery current
Erec
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
td(off)
Turn-off delay time
t
Fall time
f
EOFF
Turn-off energy loss
td(on)
Turn-on delay time
tr
Rise time
E
Turn-on energy loss
ON
Qrr
Diode reverse recovery charge
Irr
Diode reverse recovery current
Erec
Diode reverse recovery energy
DIM400GDM33-A000
Test Conditions
IC = 400A
V
GE
=
±15V
VCE = 1800V
RG(ON) = RG(OFF) = 4.7Ω
C = 68nF
ge
L ~ 100nH
IF = 400A, VR = 1800V,
dI /dt
F
=
2800A/µs
Min. Typ. Max. Units
-
1450
-
ns
-
200
-
ns
-
500
-
mJ
-
500
-
ns
-
300
-
ns
-
650
-
mJ
-
12
-
µC
-
280
-
µC
-
400
-
A
-
300
-
mJ
Test Conditions
IC = 400A
V
GE
=
±15V
VCE = 1800V
R
G(ON)
=
R
G(OFF)
=
4.7Ω
Cge = 68nF
L ~ 100nH
IF = 400A, VR = 1800V,
dIF/dt = 2000A/µs
Min. Typ. Max. Units
-
1700
-
ns
-
250
-
ns
-
600
-
mJ
-
550
-
ns
-
300
-
ns
-
850
-
mJ
-
450
-
µC
-
430
-
A
-
550
-
mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
www.dynexsemi.com
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