DIM400GDM33-A000 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
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DIM400GDM33-A000 Datasheet PDF : 10 Pages
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DIM400GDM33-A000
Replaces September 2001, version DS5495-1.2
FEATURES
s 10µs Short Circuit Withstand
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
DIM400GDM33-A000
Dual Switch IGBT Module
Preliminary Information
DS5495-1.2 September 2001
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
3300V
3.2V
400A
800A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
The Powerline range of high power modules includes half
bridge, chopper, dual and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.
The DIM400GDM33-A000 is a dual switch 3300V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand. This device is
optimised for traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM400GDM33-A000
Note: When ordering, please use the whole part number.
External connection
E1
E1
C2
C2
G1
G2
C1
C1
E2
E2
Fig. 1 Dual switch circuit diagram
C1
E1
C1
E1
G1
C2
E2
C2
G2
E2
E2 - Aux Emitter
C1 - Aux Collector
Outline type code: G
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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