BUW11AW View Datasheet(PDF) - Philips Electronics
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BUW11AW Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW11W; BUW11AW
10
handbook, halfpage
VCEsat
(V)
1
(1)
(2) (3)
MGB873
handboo1k,0h2alfpage
hFE
10
VCE = 5 V
1V
MBC095
10−1
10−2
10−1
1
IB (A) 10
(1) IC = 1.5 A.
(2) IC = 3 A.
(3) IC = 5 A.
Tj = 25 °C; solid line: typical values; dotted line: maximum values.
Fig.9 Collector-emitter saturation voltage as a
function of base current; typical values.
1
10−2
10−1
1
10
102
IC (A)
Fig.10 DC current gain; typical values.
handbook, halfpage
VIM
0
tp
T
VCC
RL
RB
D.U.T.
MGE244
VCC = 250 V; tp = 20 µs; VIM = −6 to +8 V; tp/T = 0.01.
The values of RB and RL are selected in accordance with ICon and
IBon requirements.
Fig.11 Test circuit resistive load.
handbook, halfpage
tr
90%
−IB
10%
90%
−IC
10%
ton
MBB730
−IB on
t
−IB off
−IC on
tf
t
ts
toff
Fig.12 Switching time waveforms with
resistive load.
1997 Aug 14
7
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