BUW11AW View Datasheet(PDF) - Philips Electronics
Part Name
Description
View to exact match
BUW11AW Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW11W; BUW11AW
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Switching times resistive load (see Figs 11 and 12)
ton
turn-on time
BUW11W
BUW11AW
ts
storage time
BUW11W
BUW11AW
tf
fall time
BUW11W
BUW11AW
ICon = 3 A; IBon = −IBoff = 600 mA −
ICon = 2.5 A; IBon = −IBoff = 500 mA −
ICon = 3 A; IBon = −IBoff = 600 mA −
ICon = 2.5 A; IBon = −IBoff = 500 mA −
ICon = 3 A; IBon = −IBoff = 600 mA −
ICon = 2.5 A; IBon = −IBoff = 500 mA −
Switching times inductive load (see Figs 13 and 14)
ts
storage time
BUW11W
BUW11AW
tf
fall time
BUW11W
BUW11AW
ICon = 3 A; IB = 600 mA
−
ICon = 3 A; IB = 600 mA;
−
Tj = 100 °C
ICon = 2.5 A; IB = 500 mA
−
ICon = 2.5 A; IB = 500 mA;
−
Tj = 100 °C
ICon = 3 A; IB = 600 mA
−
ICon = 3 A; IB = 600 mA;
−
Tj = 100 °C
ICon = 2.5 A; IB = 500 mA
−
ICon = 2.5 A; IB = 500 mA;
−
Tj = 100 °C
Note
1. Measured with a half-sinewave voltage (curve tracer).
−
1
µs
−
1
µs
−
4
µs
−
4
µs
−
0.8 µs
−
0.8 µs
1.1 1.4 µs
1.2 1.5 µs
1.1 1.4 µs
1.2 1.5 µs
80
150 ns
140 300 ns
80
150 ns
140 300 ns
1997 Aug 14
3
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