BC856S(2011) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

View to exact match

BC856S
(Rev.:2011)

PNP Silicon AF Transistor Arrays

Infineon Technologies 

BC856S/U_BC857S

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

AC Characteristics

Transition frequency

IC = 20 mA, VCE = 5 V, f = 100 MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

fT

- 250 - MHz

Ccb

-

1.5

- pF

Ceb

-

8

-

Short-circuit input impedance

IC = 2 mA, VCE = 5 V, f = 1 kHz

Open-circuit reverse voltage transf. ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz

Short-circuit forward current transf. ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz

h11e

h12e

h21e

-

4.5

- kΩ

-

2

- 10-4

- 330 - -

Open-circuit output admittance

IC = 2 mA, VCE = 5 V, f = 1 kHz

Noise figure

h22e

F

-

30

- µS

-

-

10 dB

IC = 200 µA, VCE = 5 V, f = 1 kHz,

∆ f = 200 Hz, RS = 2 kΩ

4

2011-07-25

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