BC856S(2011) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
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BC856S Datasheet PDF : 10 Pages
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BC856S/U_BC857S
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BC856S/U
IC = 10 mA, IB = 0 , BC857S
V(BR)CEO
65
-
45
-
-
-
-
Collector-base breakdown voltage
IC = 10 µA, IE = 0 , BC856S/U
IC = 10 µA, IE = 0 , BC857S
V(BR)CBO
80
-
-
50
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5
-
-V
Collector-base cutoff current
VCB = 45 V, IE = 0
VCB = 45 V, IE = 0 , TA = 150 °C
DC current gain1)
IC = 10 µA, VCE = 5 V
IC = 2 mA, VCE = 5 V
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-emitter voltage1)
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
ICBO
-
-
hFE
-
200
VCEsat
-
-
VBEsat
-
-
VBE(ON)
600
-
µA
- 0.015
-
5
-
250 -
290 630
mV
75 300
250 650
-
700
-
850
-
mV
650 750
- 820
1Pulse test: t < 300µs; D < 2%
3
2011-07-25
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