CR20F View Datasheet(PDF) - MITSUBISHI ELECTRIC
Part Name
Description
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CR20F Datasheet PDF : 4 Pages
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MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR20F
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
BX40-06 FIN
140
120 120 t3
ALUMINUM PLATE
θθ
120
PAINTED BLACK
360°
AND GREASED
100
RESISTIVE
LOADS
80
NATURAL
CONVECTION
60
θ = 180°
40
20
90°
0
0 4 8 12 16 20 24 28 32
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
50
270° DC
45
180°
120°
40
90°
35
60°
30 θ = 30°
25
20
θ
15
360°
10
RESISTIVE,
5
INDUCTIVE
0
LOADS
0 5 10 15 20 25 30 35 40
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
130
120
θ
110
360°
RESISTIVE,
100
INDUCTIVE
90
LOADS
80
70 θ = 30° 90° 180° 270° DC
60° 120°
60
50
0 5 10 15 20 25 30 35 40
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
160
BX40-06 FIN
140
120 120 t3
ALUMINUM PLATE θ
120
PAINTED BLACK
360°
AND GREASED RESISTIVE,
100
INDUCTIVE
80
LOADS
NATURAL
60 θ = 90°
CONVECTION
40
DC
180°
20
0
0 5 10 15 20 25 30 35 40
AVERAGE ON-STATE CURRENT (A)
CR20F BLOCK FIN BX40-06 OUTLINE DRAWING (Unit: mm)
3
M6×1
NAME PLATE
(38.5)
30
φ9.5
19.5
60
120
2−φ6.5
NAME PLATE
40
Feb.1999
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