CR20F View Datasheet(PDF) - MITSUBISHI ELECTRIC
Part Name
Description
View to exact match
CR20F Datasheet PDF : 4 Pages
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GATE CHARACTERISTICS
3
2 VFGM = 10V
101
7
5
3
2
100
7
5
3
2
10–1
7
5
PGM = 5W
VGT = 3V
IGT
Tj =
PG(AV) =
0.5W
125°C
25°C
30°C
IFGM =
2A
VGD = 0.25V
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
GATE CURRENT (mA)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
130
120
θ
110
360°
RESISTIVE,
100
INDUCTIVE
90
LOADS
80
θ = 30° 60° 90°120° 180°
70
60
50
0 4 8 12 16 20 24 28 32
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
40
120° 180°
35
90°
60°
30
θ = 30°
25
20
15
10
θθ
5
360°
0
RESISTIVE LOADS
0 4 8 12 16 20 24 28 32
AVERAGE ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR20F
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
50
45
40
35
120° 180°
90°
60°
30
θ = 30°
25
20
θ
15
360°
10
RESISTIVE,
5
INDUCTIVE
0
LOADS
0 4 8 12 16 20 24 28 32
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
BX40-06 FIN
140
120 120 t3
ALUMINUM PLATE θ
120
PAINTED BLACK
360°
AND GREASED RESISTIVE,
100
INDUCTIVE
80
θ = 180°
60
LOADS
NATURAL
CONVECTION
40
θ = 90°
20
0
0 4 8 12 16 20 24 28 32
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
130
120
θθ
110
360°
100
RESISTIVE
LOADS
90
80
70
θ = 30° 60° 90° 120°180°
60
50
0 4 8 12 16 20 24 28 32
AVERAGE ON-STATE CURRENT (A)
Feb.1999
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