DG648BH45 View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

View to exact match

DG648BH45

Gate Turn-off Thyristor

Dynex Semiconductor 

DG648BH45

7000

6000

5000

4000

Conditions:

CS = 2.0µF,

IT = 2000A

TJ = 125°C

Tj = 25°C

3000

20

30

40

50

60

70

Rate of rise of reverse gate current dIGQ/dt - (A/µs)

Fig.27 Turn-off gate charge vs rate of rise of reverse gate current

1000

Tj = 125°C

500

VD = 2250V

VD = 3000V

0

0.1

1.0

10

100

1000

Gate cathode resistance RGK - (Ohms)

Fig.28 Rate of rise of off-state voltage vs gate cathode resistance

16/19

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