DG648BH45 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
View to exact match
DG648BH45 Datasheet PDF : 18 Pages
| |||
750
Conditions:
CS = 2.0µF,
IT = 2000A
700
DG648BH45
Tj = 125°C
650
Tj = 25°C
600
550
500
20
30
40
50
60
70
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.25 Peak reverse gate current vs rate of rise of reversegate current
8000
Conditions:
CS = 2.0µF,
dIGQ/dt = 40A/µs
6000
Tj = 125°C
4000
Tj = 25°C
2000
0
0
500
1000
1500
2000
2500
3000
On-state current IT - (A)
Fig.26 Turn-off gate charge vs on-state current
15/19
Share Link: 