2SB415 View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

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2SB415

PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

NEC => Renesas Technology 

TYPICAL CHARACTERISTICS (Ta = 25°C)

Note

Note

1. 1 mm aluminum board

for heatsink

2. No insulating board

3. Silicon grease coating

4. Horizontal level

With infinite heatsink

Without te heatsink

Temperature T (°C)

2SB548, 549/2SD414, 415

Case Temperature Tc (°C)

Note

1. Tc = 25 °C

2. Derate the dissipation limited

area by case temperature and

duty cycle.

3. S/b limited area is a single

pulse. Derate this area by case

temperature.

Collector to Emitter Voltage VCE (V)

Note

1. Tc = 25 °C

2. Derate the dissipation limited

area by case temperature and

duty cycle.

3. S/b limited area is a single

pulse. Derate this area by

Collector to Emitter Voltage VCE (V)

Pulse Width PW (ms)

Collector to Emitter Voltage VCE (V)

2

Data Sheet D16141EJ2V0DS

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