2SB415 View Datasheet(PDF) - NEC => Renesas Technology

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Description

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2SB415

PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

NEC => Renesas Technology 

DATA SHEET

SILICON POWER TRANSISTOR

2SB548, 549/2SD414, 415

PNP/NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS

FEATURES

• Ideal for audio amplifier drivers with 30 W to 50 W output

• High voltage

• Available for small mount spaces due to small and thin package

• Easy to be attached to radiators

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol 2SB548/ 2SB549/ Unit

2SD414 2SD415

Collector to base voltage

VCBO

−100/120

V

Collector to emitter voltage

VCEO

−80/80 −100/100 V

Emitter to base voltage

VEBO

−5.0/5.0

V

Collector current

IC(DC)

−0.8/0.8

A

Collector current

IC(pulse)*

−1.5/1.5

A

Total power dissipation

PT (Ta = 25°C)

1.0

W

Total power dissipation

PT (Tc = 25°C)

10

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

* PW ≤ 10 ms, duty cycle ≤ 50%

PACKAGE DRAWING (UNIT: mm)

Electrode Connection

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Symbol

Conditions

Collector cutoff current

Emitter cutoff current

DC current gain

DC current gain

Collector saturation voltage

Base saturation voltage

Gain bandwidth product

Collector capacitance

ICBO

IEBO

hFE1

hFE2

VCE(sat)

VBE(sat)

fT

Cob

VCB = −80/80 V, IE = 0

VEB = −3.0/3.0 V, IC = 0

VCE = −5.0/5.0 V, IC = −2.0/2.0 mA*

VCE = −5.0/5.0 V, IC = −200/200 mA*

IC = −500/500 mA, IB = −50/50 mA*

IC = −500/500 mA, IB = −50/50 mA*

VCE = −5.0/5.0 V, IC = −100/100 mA

VCB = −10/10 V, IE = 0, f = 1.0 MHz

* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%

hFE2 CLASSIFICATION

Marking

hFE2

S

40 to 80

R

60 to 120

Q

100 to 200

P

160 to 320

MIN.

20

40

TYP.

MAX.

−1.0/1.0

−1.0/1.0

90

−0.4/0.3

−0.9/0.9

70/45

25/15

320

−2.0/2.0

−1.5/1.5

Unit

µA

µA

V

V

MHz

pF

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16141EJ2V0DS00

Date Published April 2002 N CP(K)

©

Printed in Japan

21090928

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