C5305 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

View to exact match

C5305

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC5305

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.6A

VBE(sat) Base-Emitter Saturation Voltage

IC= 3A; IB=B 0.6A

hFE-1

DC Current Gain

IC= 0.3A; VCE= 5V

hFE-2

DC Current Gain

IC= 2.5A; VCE= 5V

ICBO

Collector Cutoff Current

VCB= 600V; IE= 0

ICES

Collector Cutoff Current

VCE= 1200V; RBE= 0

IEBO

Emitter Cutoff Current

VEB= 9V; IC= 0

Switching Times

ts

Storage Time

tf

Fall Time

IC= 3.5A;IB1= 0.6A; IB2= -1.2A

MIN TYP. MAX UNIT

600

V

1.0

V

1.5

V

30

50

10

10 μA

1.0 mA

1.0 mA

2.5 μs

0.15 μs

isc Website：www.iscsemi.cn

Share Link: