C5305 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

View to exact match

C5305

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC5305

DESCRIPTION

·High Breakdown Voltage

:V(BR)CBO= 1200V (Min)

·High Speed Switching

APPLICATIONS

·Designed for inverter lighting applications.

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

1200

V

VCEO

Collector-Emitter Voltage

600

V

VEBO

Emitter-Base Voltage

9

V

IC

Collector Current-Continuous

6

A

ICM

Collector Current-Peak

Collector Power Dissipation

@Ta=25℃

PC

Collector Power Dissipation

@TC=25℃

Tj

Junction Temperature

12

A

2

W

35

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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