DIM800FSM17-A000(2002) View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
View to exact match
DIM800FSM17-A000 Datasheet PDF : 10 Pages
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DIM2400ESM17-A000
100
1
2
3
4
IGBT
Diode
Ri (˚C/KW) 0.1463 1.0645 1.3821 3.4118
τi (ms)
0.045 2.8869 21.7141 152.6381
Ri (˚C/KW) 0.5204 1.9142 2.333 8.5356
τi (ms) 0.0063516 1.4746 13.9664 111.7515
Diode
10
Transistor
1
0.1
0.001
0.01
0.1
1
10
Pulse width, tp - (s)
Fig. 11 Transient thermal impedance
4800
4400
4000
3600
3200
2800
2400
2000
1600
1200
800
400
0
0
20 40 60 80 100 120 140 160
Case temperature, Tcase - (˚C)
Fig. 12 DC current rating vs case temperature
8/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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