DIM800FSM17-A000(2002) View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
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DIM800FSM17-A000 Datasheet PDF : 10 Pages
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DIM2400ESM17-A000
TYPICAL CHARACTERISTICS
5400
4800
Common emitter
Tcase = 25˚C
Vce is measured at power busbars
and not the auxiliary terminals
4200
3600
3000
2400
1800
1200
600
0
0
VGE = 20V
15V
12V
10V
0.5 1 1.5 2 2.5 3 3.5 4
Collector-emitter voltage, Vce - (V)
4.5 5
Fig. 3 Typical output characteristics
5400
4800
4200
Common emitter
Tcase = 125˚C
Vce is measured at power busbars
and not the auxiliary terminals
3600
3000
2400
1800
1200
600
0
0
VGE = 20V
15V
12V
10V
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
1400
Tcase = 125˚C
VCC = 900V,
1200 Rg = 1Ω
L ~ 50nH
Eoff
1000
800
Eon
600
Erec
400
200
0
0
400
800 1200 1600 2000 2400
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
3000
Tcase = 125˚C
IC = 2400A
2500
Rg = 1Ω
L ~ 50nH
Eon
2000
Eoff
1500
1000
500
Erec
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Gate resistance, Rg - (Ohms)
Fig. 6 Typical switching energy vs gate resistance
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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