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Part Name
Description
TK12A45D(2010) View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
TK12A45D
(Rev.:2010)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π -MOSⅦ)
Toshiba
TK12A45D Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
−
Tc
2
Common source
VGS
=
10 V
Pulse Test
1.6
1.2
12
6
0.8
ID
=
3 A
0.4
0
−
80
−
40
0
40
80
120
160
Case temperature Tc (°C)
TK12A45D
100
Common source
Tc
=
25°C
Pulse Test
I
DR
−
V
DS
10
1
10
5
3
1 VGS
=
0 V
0.1
0
−
0.3
−
0.6
−
0.9
−
1.2
−
1.5
Drain-source voltage VDS (V)
10000
1000
100
Capacitance – V
DS
Ciss
Coss
10
Common source
VGS
=
0 V
f =1MHz
Tc
=
25°C
1
0.1
1
Crss
10
100
Drain-source voltage VDS (V)
V
th
−
Tc
5
4
3
2
Common source
1 VDS
=
10 V
ID
=
1mA
Pulse Test
0
−
80
−
40
0
40
80
120
160
Case temperature Tc (°C)
P
D
−
Tc
80
60
40
20
0
0
40
80
120
160
Case temperature Tc (°C)
Dynamic input / output
characteristics
500
20
400
VDS
300
200
100
16
180
VDD
=
90 V
VGS
12
360
8
Common source
ID
=
12 A
Tc
=
25°C
Pulse Test
4
0
0
0
8
16
24
32
40
Total gate charge Qg (nC)
4
2010-04-14
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