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Part Name
Description
TK12A45D(2010) View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
TK12A45D
(Rev.:2010)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π -MOSⅦ)
Toshiba
TK12A45D Datasheet PDF : 6 Pages
1
2
3
4
5
6
10
Common source
Tc
=
25°C
Pulse Test
8
I
D
– V
DS
10
7
8
6.5
6
4
6
2
5.5
VGS
=
5 V
0
0
2
4
6
8
10
Drain-source voltage VDS (V)
TK12A45D
I
D
– V
DS
20
10
8
7.5
Common source
16
Tc
=
25°C
Pulse Test
7
12
8
6.5
4
6
VGS
=
5.5 V
0
0
10
20
30
40
50
Drain-source voltage VDS (V)
20
Common source
VDS
=
20 V
Pulse Test
16
I
D
– V
GS
12
8
25
4
100
Tc
= −
55 °C
0
0
2
4
6
8
10
Gate-source voltage VGS (V)
V
DS
– V
GS
20
Common source
Tc
=
25°C
Pulse Test
16
12
8
ID
=
12 A
4
6
3
0
0
4
8
12
16
20
Gate-source voltage VGS (V)
100
Common source
VDS
=
20 V
Tc
=
25°C
Pulse Test
|Y
fs
| – I
D
10
1
10
Common source
VGS
=
10 V
Tc
=
25°C
Pulse Test
R
DS (ON)
– I
D
1
0.1
0.1
1
10
100
Drain current ID (A)
0.1
0.1
1
10
100
Drain current ID (A)
3
2010-04-14
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