MG150Q2YS65H View Datasheet(PDF) - Toshiba
Part Name
Description
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MG150Q2YS65H Datasheet PDF : 6 Pages
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VCE, VGE – QG
1600
16
Common emitter
RL = 4 W
Tc = 25°C
1200
12
VCE = 0
800
8
200 V 400 V 600 V
400
4
0
0
200
400
600
800
1000
Charge QG (nC)
MG150Q2YS65H
100000
C – VCE
10000
Cies
Coes
Cres
1000
Common emitter
VGE = 0
f = 1 MHz
Tc = 25°C
100
0.01
0.1
1
10
100
Collector-emitter voltage VCE (V)
Short circuit SOA
6
5
4
3
2
VCC <= 900 V
1 Tj <= 125°C
tw = 5 ms
0
0
200 400 600 800 1000 1200 1400
Collector-emitter voltage VCE (V)
1000
100
10
Reverse bias SOA
1
Tj <= 125°C
VGE = ±15 V
RG = 5.6 W
0.1
0
500
1000
Collector-emitter voltage VCE (V)
1500
Rth (t) – tw
1
Diode stage
0.1
Transistor stage
0.01
Tc = 25°C
0.001
0.001
0.01
0.1
1
10
Pulse width tw (s)
5
2002-10-04
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