MG150Q2YS65H View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
MG150Q2YS65H Datasheet PDF : 6 Pages
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Switching time – IC
1
: Tc = 25°C
Common emitter
: Tc = 125°C
VCC = 600 V
VGE = ±15 V
RG = 5.6 W
ton
0.1
td (on)
tr
0.01
10
100
Collector current IC (A)
1000
MG150Q2YS65H
Switching time – IC
1
toff
td (on)
0.1
Common emitter
VCC = 600 V
VGE = ±15 V
RG = 5.6 W
0.01
10
tf
: Tc = 25°C
: Tc = 125°C
100
1000
Collector current IC (A)
Switching time – RG
1
: Tc = 25°C
: Tc = 125°C
ton
td (on)
tr
0.1
0.01
0
Common emitter
VCC = 600 V
IC = 150 A
VGE = ±15 V
10
20
30
40
50
Gate resistance RG (9)
Switching time – RG
10
Common emitter
VCC = 600 V
IC = 15 A
VGE = ±15 V
: Tc = 25°C
: Tc = 125°C
1
toff
td (off)
0.1
tf
0.01
0
10
20
30
40
50
Gate resistance RG (9)
Switching loss – IC
100
: Tc = 25°C
Common emitter
: Tc = 125°C
VCC = 600 V
VGE = ±15 V
RG = 5.6 W
Eoff
Eon
10
Edsw
1
0
50
100
150
200
Collector current IC (A)
Switching loss – RG
100
Common emitter
VCC = 600 V
IC = 150 A
VGE = ±15 V
Eon
Eoff
10
Edsw
: Tc = 25°C
: Tc = 125°C
1
0
10
20
30
40
50
Gate resistance RG (9)
4
2002-10-04
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