CR04AM12 View Datasheet(PDF) - MITSUBISHI ELECTRIC
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CR04AM12 Datasheet PDF : 6 Pages
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BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
Tj = 125°C
140
RGK = 1kΩ
120
100
80
60
40
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
500
TYPICAL EXAMPLE
IGT (25°C) IH (1kΩ)
400
# 1 25µA 0.9mA
300
200
#1
100
Tj = 25°C
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE TO CATHODE RESISTANCE (kΩ)
TURN-ON TIME VS. GATE CURRENT
102
7 TYPICAL EXAMPLE
5
3
2
VD = 100V
RL = 47Ω
RGK = 1kΩ
Ta = 25°C
101
7
5
3
2
100
7
5
3
2
10–1
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE CURRENT (mA)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR04AM
LOW POWER USE
GLASS PASSIVATION TYPE
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
101
7 DISTRIBUTION
5
3
2
100
7
5
3
,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,TY,,,,,IPGITC,,,,,(A2L5,,,,,°ECX,,,,,)A=M,,,,,3P5Lµ,,,,,EA
2
10–1
7
5
3
2
RGK = 1kΩ
10–2
–60–40 –20 0
20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
GATE TRIGGER CURRENT
4.0
Tj = 25°C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
100
101
102
GATE TRIGGER CURRENT (µA)
TURN-OFF TIME VS.
JUNCTION TEMPERATURE
40
VD = 50V, VR = 50V
35 IT = 2A, RGK = 1kΩ
31122,,,,,,,,505050 ,,,,,,,,DIS,,,,,,,,TR,,,,,,,,IBU,,,,,,,,TI,,,,,,,,ONT,,,,,,,,YP,,,,,,,,IC,,,,,,,,AL,,,,,,,,EX,,,,,,,,AMPLE
0
0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
Feb.1999
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