CR04AM12 View Datasheet(PDF) - MITSUBISHI ELECTRIC
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Description
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CR04AM12 Datasheet PDF : 6 Pages
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MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
0.8
θ = 30° 90°
0.7
60° 120°
180°
0.6
0.5
0.4
0.3
0.2
0.1
0
0
θθ
360°
RESISTIVE LOADS
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
0.8
90° 180°
0.7
θ = 30° 60° 120° 270°
DC
0.6
0.5
0.4
0.3
0.2
0.1
0
0
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
RGK = 1kΩ
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR04AM
LOW POWER USE
GLASS PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
140
θθ
120
360°
100
RESISTIVE LOADS
NATURAL
80
CONVECTION
60
40
20 θ = 30° 60° 90° 120° 180°
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
160
140
θ
120
360°
RESISTIVE,
100
INDUCTIVE
80
LOADS
NATURAL
60
CONVECTION
40
20
60° 120° 270°
θ = 30° 90° 180°
DC
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
120
TYPICAL EXAMPLE
100
80
60
40
20
Tj = 125°C
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE TO CATHODE RESISTANCE (kΩ)
Feb.1999
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