BSZ019N03LS View Datasheet(PDF) - Infineon Technologies

Part Name

Description

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BSZ019N03LS

n-Channel Power MOSFET

Infineon Technologies 

Table 14

13 Avalanche characteristics

OptiMOS™ Power-MOSFET

BSZ019N03LS

Electrical characteristics diagrams

14 Typ. gate charge

IAS=f(tAV); RGS=25 Ω; parameter: Tj(start)

Table 15

15 Drain-source breakdown voltage

VGS=f(Qgate); ID=30 A pulsed; parameter: VDD

16 Gate charge waveforms

VBR(DSS)=f(Tj); ID=1 mA

Final Data Sheet

8

2.1, 2011-09-21

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