BSZ019N03LS View Datasheet(PDF) - Infineon Technologies
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Description
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BSZ019N03LS Datasheet PDF : 11 Pages
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OptiMOS™ Power-MOSFET
BSZ019N03LS
Electrical characteristics
4
Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 4 Static characteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V(BR)DSS
VGS(th)
IDSS
Min.
30
1.2
-
-
Values
Typ.
Max.
-
-
-
2
0.1
1
10
100
Gate-source leakage current
IGSS
-
Drain-source on-state resistance RDS(on) -
-
10
100
2.0
2.5
1.6
1.9
Gate resistance
Transconductance
RG
0.4
0.8
1.6
gfs
70
140
-
Unit Note / Test Condition
V
VGS=0 V, ID=1.0 mA
VDS=VGS, ID=250 µA
µA
VDS=30 V, VGS=0 V,
Tj=25 °C
VDS=30 V, VGS=0 V,
Tj=125 °C
nA
VGS=20 V, VDS=0 V
mΩ VGS=4.5 V, ID=20 A
VGS=10 V, ID=20 A
Ω
S
|VDS|>2|ID|RDS(on)max,
ID=30 A
Table 5 Dynamic characteristics
Parameter
Symbol
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
-
-
-
-
Values
Typ.
2800
960
140
5.4
6.8
28
4.6
Max.
-
-
-
-
-
-
-
Unit
pF
Note /
Test Condition
VGS=0 V, VDS=15 V,
f=1 MHz
ns
VDD=15 V, VGS=10 V,
ID=30 A, RG= 1.6 Ω
Final Data Sheet
3
2.1, 2011-09-21
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