9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 20 A, VGS = 10 V
IPD14N03L
32
mΩ
24
IPD14N03L
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
2.5
V
300µA
20
16
98%
12
typ
1.5
30µA
1
8
0.5
4
0-60 -20
20
60 100 140 °C 200
Tj
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
10 4
pF
0-60
-20
20
60 100 °C
180
Tj
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
10 3 IPD14N03L
A
Ciss
10 3
10 2
Coss
10 2
10 1
0
Crss
5
10
15
20
V
30
VDS
10 1
10 0
0
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
Page 6
2003-01-17