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IPD14N03L View Datasheet(PDF) - Unspecified

Part Name
Description
View to exact match
IPD14N03L
ETC
Unspecified ETC
IPD14N03L Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
IPD14N03L
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
-
1.3
2 K/W
-
- 100
-
-
75
-
-
50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = VDS
ID = 30 µA
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=20A
Drain-source on-state resistance
VGS=10V, ID=20A
V(BR)DSS 30
-
-V
VGS(th)
1.2 1.6
2
I DSS
I GSS
µA
- 0.01 1
-
10 100
-
1 100 nA
RDS(on)
- 16.1 20 m
RDS(on)
- 10.8 13.5
1Current limited by bondwire ; with an RthJC = 2K/W the chip is able to carry ID= 59A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2003-01-17

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