CHAPTER 1 OUTLINE (µPD780078 SUBSERIES)
1.8 Outline of Functions
Item
Internal memory
Part Number
ROM
High-speed RAM
Expansion RAM
Memory space
General-purpose registers
Minimum instruction
execution time
When main system
clock selected
Instruction set
When subsystem
clock selected
I/O ports
Timer
Clock output
Timer output
Buzzer output
A/D converter
Serial interface
Vectored interrupt Maskable
source
Non-maskable
Software
Power supply voltage
Operating ambient temperature
Package
µPD780076
µPD780078
µPD78F0078
48 KB
(Mask ROM)
60 KB
(Mask ROM)
60 KBNote 1
(Flash memory)
1024 bytes
1024 bytes
64 KB
8 bits × 32 registers (8 bits × 8 registers × 4 banks)
Minimum instruction execution time selection function
• 0.166 µs/0.333 µs/0.666 µs/1.33 µs/2.66 µs (@ 12 MHz operation, expanded-
specification products only)
• 0.238 µs/0.477 µs/0.954 µs/1.90 µs/3.81 µs (@ 8.38 MHz operation)
122 µs (@ 32.768 kHz operation)
• 16-bit operation
• Multiply/divide (8 bits × 8 bits, 16 bits ÷ 8 bits)
• Bit manipulation (set, reset, test, and Boolean operation)
• BCD adjust, etc.
Total:
52
• CMOS input:
8
• CMOS I/O:
40
• N-ch open-drain I/O (5 V tolerant): 4
• 16-bit timer/event counter: 2 channels
• 8-bit timer/event counter: 2 channels
• Watch timer:
1 channel
• Watchdog timer:
1 channel
4 outputs (8-bit PWM www.DataSheet.net/ output enabled: 2)
• 93.7 kHz, 187 kHz, 375 kHz, 750 kHz, 1.5 MHz, 3 MHz, 6 MHz, 12 MHz
(12 MHz with main system clock, expanded-specification products only)
• 65.5 kHz, 131 kHz, 262 kHz, 524 kHz, 1.05 MHz, 2.10 MHz, 4.19 MHz, 8.38 MHz
(8.38 MHz with main system clock)
• 32.768 kHz (32.768 kHz with subsystem clock)
• 1.46 kHz, 2.92 kHz, 5.85 kHz, 11.7 kHz
(12 MHz with main system clock, expanded-specification products only)
• 1.02 kHz, 2.05 kHz, 4.10 kHz, 8.19 kHz (8.38 MHz with main system clock)
• 10-bit resolution × 8 channels
• Low-voltage operation: AVREF = 2.2 to 5.5 V
• 3-wire serial I/O mode:
1 channel
• UART mode:
1 channel
• 3-wire serial I/O/UART mode selectableNote 2: 1 channel
Internal: 18, External: 5
Internal: 1
1
VDD = 1.8 to 5.5 V
TA = –40 to +85°C
• 64-pin plastic LQFP (14 × 14)
• 64-pin plastic QFP (14 × 14)
• 64-pin plastic TQFP (12 × 12)
Notes 1. The capacity of the internal flash memory can be changed by means of the memory size switching register
(IMS).
2. Select either of the functions of these alternate-function pins.
User’s Manual U14260EJ3V1UD
27
Datasheet pdf - http://www.DataSheet4U.co.kr/