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JANS1N5809(Rev_1) View Datasheet(PDF) - Microsemi Corporation

Part Name
Description
View to exact match
JANS1N5809
(Rev.:Rev_1)
Microsemi
Microsemi Corporation Microsemi
JANS1N5809 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Bussiness Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS @ 30oC Case Temperature
TYPE
WORKING BREAKDOWN AVERAGE AVERAGE
PEAK
VOLTAGE RECTIFIED RECTIFIED
REVERSE
(MIN.) CURRENT CURRENT
VOLTAGE @ 100μA
IO1
IO2
VRWM
VBR
@TL=75ºC @TA=55ºC
(Note 1)
Note 2
MAXIMUM
FORWARD
VOLTAGE
@ 4A
(8.3 ms pulse)
VF
VOLTS
VOLTS
AMPS
VOLTS
25oC 100oC
REVERSE
CURRENT
(MAX)
@ VRWM
IR
μA
25oC 125oC
SURGE
CURRENT
(MAX)
IFSM
(NOTE 3)
AMPS
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
trr
ns
1N5807, US
50
60
6.0
3.0
0.875 0.800 5 525
125
30
1N5809, US
100
110
6.0
3.0
0.875 0.800 5 525
125
30
1N5811, US
150
160
6.0
3.0
0.875 0.800 5 525
125
30
NOTE 1: Leaded: Rated at TL = 75ºC at 3/8 inch lead length. Derate at 60 mA/ºC for TL above 75ºC.
Surface mount: Rated at TEC = 75°C. Derate at 60 mA/ºC for TEC above 75ºC.
NOTE 2: Derate linearly at 25 mA/ºC above TA = 55ºC. This rating is typical for PC boards where thermal resistance
from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175ºC
NOTE 3: TA = 25oC @ IO = 3.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals
NOTE 4: IF = 1.0 A, IRM = 1.0 A, IR(REC) = 0.10 A and di/dt = 100 A/µs min
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified
current.
IR
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
Reverse Recovery Time: The time interval between the instant the current passes through zero when
trr changing from the forward direction to the reverse direction and a specified recovery decay point after a
peak reverse current is reached.
T4-LDS-0168 Rev. 1 (101025)
Page 3 of 7

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