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RJK6002DPD 数据手册 ( 数据表 )

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Renesas Electronics

Silicon N Channel MOS FET High Speed Power Switching

SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

N-Channel MOSFET uses advanced trench technology

VBsemi Electronics Co.,Ltd

N-Channel 650 V (D-S) MOSFET

Match & Start : RJK6002DPD

Renesas Electronics

Silicon N Channel MOS FET High Speed Power Switching

SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

N-Channel MOSFET uses advanced trench technology

VBsemi Electronics Co.,Ltd

N-Channel 650 V (D-S) MOSFET

Renesas Electronics

RJK6002DPD-00-J2

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics

600V - 2A - MOS FET High Speed Power Switching

Renesas Electronics

RJK6002DPE-00J3

600V - 2A - MOS FET High Speed Power Switching

Renesas Electronics

RJK6002DPH-E0

600V - 2A - MOS FET High Speed Power Switching

Renesas Electronics

RJK6002DPH-E0T2

600V - 2A - MOS FET High Speed Power Switching

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