ZXTN2010Z-13R 数据手册 ( 数据表 ) - Diodes Incorporated.
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Diodes Incorporated.
Features
• BVCEO > 60V
• IC = 5A High Continuous Current
• RSAT = 30mΩ for a Low Equivalent On-Resistance
• Low Saturation Voltage VCE(SAT) < 65mV @ IC = 1A
• hFE Specified Up to 10A for High Current Gain Hold Up
• Complementary PNP Type: ZXTP2012Z
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)
APPLICATION
• Emergency Lighting Circuits
• Motor Driving (Including DC Fans)
• Backlight Inverters
• Power Switches
• Gate Driving MOSFETs and IGBTs
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
Zetex => Diodes
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
Zetex => Diodes
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 ( Rev : 2012 )
Diodes Incorporated.
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
Diodes Incorporated.
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 ( Rev : 2005 )
Diodes Incorporated.
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
Zetex => Diodes
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
Zetex => Diodes
30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
Diodes Incorporated.
30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
Diodes Incorporated.
25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 ( Rev : 2005 )
Diodes Incorporated.