
Diodes Incorporated.
DEVICE DESCRIPTION
The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR, cellular telephones etc. with a minimum of external components.
With the addition of two capacitors and a resistor the devices provide drain voltage and current control for 3 external grounded source FETs, generating the regulated negative rail required for FET gate biasing whilst operating from a single supply. This negative bias, at -3 volts, can also be used to supply other external circuits.
FEATURES
• Provides bias for GaAs and HEMT FETs
• Drives up to three FETs
• Dynamic FET protection
• Drain current set by external resistor
• Regulated negative rail generator requires only 2 external capacitors
• Choice in drain voltage
• Wide supply voltage range
• QSOP surface mount package
APPLICATIONS
• Satellite receiver LNBs
• Private mobile radio (PMR)
• Cellular telephones
• Single in single out C Band LNB