■General Description
The XP131A1617SR is an N-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
The small SOP-8 package makes high density mounting possible.

◆ N-Channel Power MOS FET
◆ DMOS Structure
◆ Low On-State Resistance : 0.014Ω (max)
◆ Ultra High-Speed Switching
◆ SOP-8 Package

■ Features
    Low on-state resistance : Rds (on) = 0.014Ω ( Vgs = 4.5V ) : Rds (on) = 0.019Ω ( Vgs = 2.5V )
    Ultra high-speed switching
    Operational Voltage : 2.5V
    High density mounting : SOP-8

■ Applications
● Notebook PCs
● Cellular and portable phones
● On-board power supplies
● Li-ion battery systems