DESCRIPTION
   The WM710xx is a RFID transponder IC with nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory, or F-RAM, is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 20 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

FEATURES
4/8/16 Kbit Ferroelectric Nonvolatile RAM
• Organized as 256/512/1024 x 16 bits
• Very High Read/Write Endurance (> 1014)
• 20-Year Data Retention
• Gamma Stability Demonstrated to > 30 kGy
• Symmetric Read/Write Operation
• Advanced High-Reliability Ferroelectric Process

Interface and Security Features
• EPC Class 1 Gen2 (ISO18000-6C) RFID
   Compatible Interface (revision 1.2.0)
• 192-Bit Memory: 96-Bit Electronic Product
   Code™ (EPC), 32-Bit Access Password, 32-Bit
   KILL Password, 64-Bit TID Memory (Factory
   Programmed and Locked)
• Inventory, Read, Write and Erase features
• Kill Command
• Block Permalock Command
• Access Command
• UHF carrier frequencies from 860 MHz to 960
   MHz ISM band, ASK demodulation
• Tag-to-reader link frequencies up to 640Kbps
• Reader-to-tag asymptotical transmission rates up
   to 128Kbps
• Supports FM0 and MMS data encoding formats

Custom Features
• Stored Address Pointer to Improve Data Write
   Speed
• Stored Address Pointer Lock
• Block Write Command
• Variable USER Memory Block Size Support

Ultra Low Power Operation
• Memory Read/Write Sensitivity: < -6 dBm (typ.)

Industry Standard Configurations
• Industrial Temperature -40°C to +85°C
• Bumped Wafers
• 8-pin UDFN