General Description
This Power MOSFET is produced using Winsemis advancedplanar stripe,DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for high efficiencyswitch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.

FEATUREs
■ 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V
■ Ultra-low Gate charge(Typical 43nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃ )