GENERAL DESCRIPTION
W986416DH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Using pipelined architecture and 0.175 mm process technology, W986416DH delivers a data bandwidth of up to 400M bytes per second (-5). For different application, W986416DH is sorted into the following speed grades: -5, -6, -7. The -5 parts can run up to 200 MHz/CL3. The -6 parts can run up to 166 MHz/CL3. The -7 parts can run up to 143 MHz/CL3. For handheld device application, we also provide a low power option, the grade of -7L, with Self Refresh Current under 400 mA and work well at 2.7V during Self Refresh Mode. For special application, we provide extended temperature option the grade of -6I can work well in wide temperature from -40° C to 85° C.

FEATURES
• 3.3V ±0.3V power supply
• 1048576 words x 4 banks x 16 bits organization
• Self Refresh Current: Standard and Low Power
• CAS latency: 2 and 3
• Burst Length: 1, 2, 4, 8, and full page
• Sequential and Interleave burst
• Burst read, single write operation
• Byte data controlled by DQM
• Power-down Mode
• Auto-precharge and controlled precharge
• 4K refresh cycles/64 mS
• Interface: LVTTL
• Packaged in TSOP II 54-pin, 400 mil - 0.80