W45NM50 数据手册 ( 数据表 ) - STMicroelectronics
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STMicroelectronics
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
◾ TYPICAL RDS(on) = 0.08Ω
◾ HIGH dv/dt AND AVALANCHE CAPABILITIES
◾ 100% AVALANCHE TESTED
◾ LOW INPUT CAPACITANCE AND GATE
CHARGE
◾ LOW GATE INPUT RESISTANCE
◾ TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
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N-CHANNEL 500V 0.07 OHM 45A TO-247 FDMESH POWER MOSFET
STMicroelectronics
N-CHANNEL 500V - 0.065Ω - 45A TO-247 MDmesh™ Power MOSFET
STMicroelectronics
N-CHANNEL 500V - 0.07Ω - 45A TO-247 FDmesh™Power MOSFET (With FAST DIODE) ( Rev : 2002 )
STMicroelectronics
N-channel 650V@Tjmax - 0.09Ω- 45A - TO-247 MDmesh™ Power MOSFET
STMicroelectronics
N-channel 650V@Tjmax - 0.09Ω - 45A - TO-247 MDmesh™ Power MOSFET ( Rev : 2007 )
STMicroelectronics
N-CHANNEL 550V @ Tjmax - 0.065Ω - 45A TO-247 MDmesh™ MOSFET ( Rev : 2004 )
STMicroelectronics
N-CHANNEL 500V - 0.32Ω - 14A TO-247 MDmesh™ Power MOSFET ( Rev : 2002 )
STMicroelectronics
N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH™ MOSFET
STMicroelectronics
N - CHANNEL 500V - 0.33Q - 14A - TO-247 PowerMESH™ MOSFET
New Jersey Semiconductor
N-CHANNEL 500V - 0.10Ω - 30A TO-247 MDmesh™ MOSFET ( Rev : 2005 )
STMicroelectronics