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VSMB2020X01 数据手册 ( 数据表 ) - Vishay Semiconductors

VSMB2000X01 image

零件编号
VSMB2020X01

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8 Pages

File Size
133.6 kB

生产厂家
Vishay
Vishay Semiconductors 

DESCRIPTION
VSMB2000X01 series are infrared, 940 nm emitting diodes in GaAlAs (DH) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD).


FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
• AEC-Q101 qualified
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:  = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Terminal configurations: gullwing or reserve gullwing
• Package matches with detector VEMD2000X01 series
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC


APPLICATIONS
• IrDA compatible data transmission
• Miniature light barrier
• Photointerrupters
• Optical switch
• Control and drive circuits
• Shaft encoders

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零件编号
产品描述 (功能)
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生产厂家
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High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW ( Rev : 2014 )
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High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW ( Rev : 2010 )
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High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
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High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero ( Rev : 2009 )
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