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VSMB11940X01(2014) 数据手册 ( 数据表 ) - Vishay Semiconductors

VSMB11940X01 image

零件编号
VSMB11940X01

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page
6 Pages

File Size
198.3 kB

生产厂家
Vishay
Vishay Semiconductors 

DESCRIPTION
VSMB11940X01 is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, molded in clear, untinted plastic package (with lens) for surface mounting (SMD).


FEATURES
• Package type: Surface mount
• Package form: Side view
• Dimensions (L x W x H in mm): 3 x 2 x 0.6
• AEC-Q101 qualified
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• High speed
• Angle of half intensity: ϕ = ± 75°
• Low forward voltage
• Package matches with detector VEMD11940FX01
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: For definitions of compliance
   please see www.vishay.com/doc?99912


APPLICATIONS
• IR touch panel
• High power emitter for low space applications
• High performance transmissive or reflective sensors


零件编号
产品描述 (功能)
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生产厂家
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
PDF
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
PDF
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
PDF
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
PDF
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW ( Rev : 2010 )
PDF
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
PDF
Vishay Semiconductors

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