零件编号
VBT1045CBP-E3/4W
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Vishay Semiconductors
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VBT1045CBP-E3/4W(2013) 数据手册 ( 数据表 ) - Vishay Semiconductors
Vishay Semiconductors
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
• TJ 200 °C max. in solar bypass mode application
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
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