Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF= 0.50 V at IF= 5 A

FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
•Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode,  and reverse battery protection.