USS5350(2011) 数据手册 ( 数据表 ) - Unisonic Technologies
生产厂家
Unisonic Technologies
FEATURES
* Low collector-emitter saturation voltage VCE(SAT)
* High collector current capability: IC and ICM
* Higher efficiency leading to less heat generation
* Reduced printed-circuit board requirements.
* Complement: USS4350.
50V, 3A NPN LOW VCE(SAT) TRANSISTOR
Unisonic Technologies
Bipolar Transistor –50V, –3A, Low VCE(sat), PNP Single MCPH6
ON Semiconductor
Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single CPH6
ON Semiconductor
Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single MCPH3
ON Semiconductor
Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single CPH3
ON Semiconductor
Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single CPH3
ON Semiconductor
Low VCE(sat) Transistor (20V, 3A)
ROHM Semiconductor
Low VCE(sat) Transistor(-20V,-3A)
Galaxy Semi-Conductor
Low VCE(sat) Transistor (-20V, -3A) ( Rev : V2 )
ROHM Semiconductor
Low VCE(sat) Transistor (−20V, −3A)
ROHM Semiconductor
