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UPD65000 数据手册 ( 数据表 ) - NEC => Renesas Technology

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零件编号

UPD65000

产品描述 (功能)

3-MICROON CMOS GATE ARRAYS

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NEC => Renesas Technology

Description
The μD65000 (CMOS-2) series of gate arrays are low-power, high-speed devices featuring 3-micron silicon gate CMOS technology. The basic cell on the chip consists of four transistors, two P-channel and two N-channel, with double-layer metal Interconnects.

FEATUREs
UPD65000

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零件编号

产品描述 (功能)

视图

生产厂家

μPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS

NEC => Renesas Technology

AV CMOS SEREIS GATE ARRAYS

Fujitsu

1.0-MICRON CMOS GATE ARRAYS

NEC => Renesas Technology

CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS

NEC => Renesas Technology

OR2C10A-3S240-DB

Field-Programmable Gate Arrays

Unspecified

Field-Programmable Gate Arrays

Unspecified

Field-Programmable Gate Arrays

Xilinx Inc

Coprocessor Field Programmable Gate Arrays

Atmel Corporation

RICMOS™ SOI GATE ARRAYS

Honeywell International

μPD65000 (CMOS-2) SERIES 3-MICRON CMOS GATE ARRAY

NEC => Renesas Technology

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